Manufacturing method of semiconductor device

ABSTRACT

Provided is a semiconductor device having a pad on a semiconductor chip, a first passivation film formed over the semiconductor chip and having an opening portion on the pad of a probe region and a coupling region, a second passivation film formed over the pad and the first passivation film and having an opening portion on the pad of the coupling region, and a rewiring layer formed over the coupling region and the second passivation film and electrically coupled to the pad. The pad of the probe region placed on the periphery side of the semiconductor chip relative to the coupling region has a probe mark and the rewiring layer extends from the coupling region to the center side of the semiconductor chip. The present invention provides a technology capable of achieving size reduction, particularly pitch narrowing, of a semiconductor device.

CROSS-REFERENCE TO RELATED APPLICATIONS

The disclosure of Japanese Patent Application No. 2008-92633 filed onMar. 31, 2008 including the specification, drawings and abstract isincorporated herein by reference in its entirety.

BACKGROUND OF THE INVENTION

The present invention relates to a semiconductor device and amanufacturing technology thereof. In particular, the invention pertainsto a technology effective when applied to the manufacture of asemiconductor device having a conductive film formed, after a probe teststep is performed by bringing a probe needle into contact with a pad, onthe pad by plating.

In a probe test step (test step) of a semiconductor device equipped witha semiconductor circuit (for example, LSI), electrical properties aremeasured by bringing a probe needle (probe) into contact with thesurface of a pad formed over a semiconductor wafer. Since this probeneedle is made of a hard metal such as W (tungsten) and has a sharp top,it inevitably gives an external damage, as a probe mark, to the surfaceof a pad made of, for example, Al (aluminum) during the probe test step.

Japanese Patent Laid-Open No. 2007-318014 (Patent Document 1) disclosesa technology of carrying out inspection by bringing a probe needle intocontact with one of two regions of a pad and forming a bump electrode inthe other region having no probe mark.

SUMMARY OF THE INVENTION

FIGS. 1(a), 1(b) and 1(c) are fragmentary cross-sectional schematicviews of a semiconductor device during manufacturing steps thereofinvestigated by the present inventors, in which FIG. 1(a) illustratesthe device after formation steps of a semiconductor circuit and a padare completed; FIG. 1(b) illustrates the device probed in a probe teststep; and FIG. 1(c) illustrates the device after a rewiring layer isformed. In FIG. 1, the symbol 1W indicates a semiconductor wafer, 2indicates a pad, 3 indicates a passivation film, 4 indicates a probeneedle, 5 indicates a passivation film, 6 indicates a seed film, 7indicates rewiring layer, 8 indicates a passivation film, and 9indicates a bump electrode.

Manufacturing steps of a semiconductor device include a probe test stepusing the probe needle 4 in order to test the properties of asemiconductor circuit formed over the main surface (element formationsurface) of the semiconductor wafer 1W. This probe test step is carriedout while bringing the probe needle 4 into contact with a plurality ofthe pads 2 (FIG. 1(a)) formed over each device formation region (aregion which will be a semiconductor chip later, a chip region) (FIG.1(b)). A probe mark 100 (external damage, recess) caused by the probeneedle 4 remains on the surface of the pad 2 of each device formationregion which has finished the probe test step. It should be noted thatin FIG. 1, a cantilever probe is employed for probing.

In recent years, with a reduction in the size of semiconductor devices,the pitch of pads (pad pitch) of a semiconductor chip tends to benarrow. It is therefore necessary to reduce the size of each pad inorder to increase the pin count and thereby fabricate a multifunctionaldevice. When such a pad is subjected to probe test, the probe mark seemsto large relative to the pad.

For example, when a wire (which will hereinafter be called “wire”simply) is coupled onto a pad having such a large probe mark, presenceof the probe mark reduces a contact area between the wire and the pad,which may lead to a poor coupling problem. Coupling of a wire to aposition where the probe mark is absent as described in Patent Document1 is considered as a measure to solve the problem.

As another measure against the pitch reduction of a semiconductordevice, pitch conversion of a pad using rewiring technology is presumedto be effective. Rewiring technology (which is also called “WPP (WaferProcess Package) technology” or “WLP (Wafer Level Package) technology”)is a technology in which a typical wafer process (a front-end step) anda packaging process (a back-end step) are integrated. In thistechnology, after completion of packaging in the form of a semiconductorwafer, the wafer is individualized into each semiconductor chips. Inshort, a semiconductor chip having a widened pitch is manufactured byforming pads with a narrow pitch by utilizing a miniaturizationtechnology of a wafer process and then forming a rewiring layerelectrically coupled to the pad.

The present inventors investigated not a semiconductor device in which awire is coupled to the pads of a semiconductor chip but a semiconductordevice capable of converting the pitch of the pads of the semiconductorchip by utilizing the rewiring technology as described above. Theinventors have found the following problems of such a semiconductordevice.

By the rewiring technology, a seed film 6 which is a conductive film isformed by sputtering over a pad 2 formed in each device formation regionand a rewiring layer 7 (interconnect layer) is formed by plating. Then,the pad 2 is led to a desired position (vacant region) over the mainsurface of the semiconductor wafer (which will be a semiconductor chiplater) in order to couple it to the outside of the semiconductor chip.This means that the rewiring layer 7 is formed by plating so that evenif the probe mark 100 is present on the pad 2, the rewiring layer 7 isformed over the pad 2 to block therewith the probe mark 100. Use of thisrewiring technology therefore enables coupling between the rewiringlayer 7 and the pad 2 even if the large probe mark 100 is formed overthe pad 2.

The present inventors however have found another problem as describedbelow. First, the present inventors found that as illustrated in FIG.1(c), a convex portion 101 like a hump was formed on the surface of therewiring layer 7. As a result of analysis of this convex portion 101, apore 102 (gap) appeared at the interface between the surface of the pad2 and the rewiring layer 7 as illustrated in FIG. 1(c).

This pore 102 is presumed to be formed because the rewiring layer 7formed by plating seems to block the probe mark 100 therewith, but aplating film (plating layer) grows in the rewiring layer 7 so as toblock the upper portion of the probe mark 100 (recess). When a region(including a margin of the region) with which the probe 4 is broughtinto contact and a region (including a margin of the region) in whichthe seed film 6 (conductive film) is formed over the pad 2 including themargin are equal, formation of such a pore 102 in a current pathwayraises the resistance of the rewiring layer as a interconnect layer andthere is a fear of delay in signal transmission.

In addition, breakage of the seed film 6 due to a step difference of theprobe mark 102 hampers the subsequent uniform growth of plating. Thereis therefore a fear of a pore being formed inside of the plating filmand this may lead to a decrease in contact area, deterioration incoupling, worsening of surface flatness, deterioration in the coveragewith an upper passivation film 8, and short-circuit with an adjacentportion.

An object of the invention is to provide a technology capable ofachieving the size reduction of a semiconductor device, particularly,the pitch narrowing of the device.

Another object of the invention is to provide a technology capable ofachieving the high pin count of a semiconductor device.

A further object of the invention is to provide a technology capable ofachieving improvement in the electrical properties of a semiconductordevice operated at a high speed.

A still further object of the invention is to provide a technologycapable of achieving improvement in the reliability of a semiconductordevice.

The above-described and the other objects and novel features of theinvention will be apparent by the description herein and accompanyingdrawings.

The typical invention of the inventions disclosed herein will next bedescribed briefly.

In one aspect of the invention, there is provided a manufacturing methodof a semiconductor device, which includes forming, over a semiconductorwafer, a pad having a probe region and a coupling region, forming afirst insulating film from which the probe region and the couplingregion are exposed, bringing a probe needle to the pad in the proberegion to measure electrical properties, and forming a conductive filmcovering therewith the first insulating film and the coupling regionover the pad.

Advantages available by the typical invention disclosed herein will nextbe described briefly.

According to the one aspect of the invention, a rewiring layer can beformed using a conductive film free from pores due to a probe mark. Thisenables to provide a technology capable of achieving the size reduction,particularly pitch narrowing, of a semiconductor device; a technologycapable of achieving a high pin count of a semiconductor device; atechnology capable of achieving improvement in the reliability of asemiconductor device; and a technology capable of achieving improvementin electrical properties of a semiconductor device operated at a highspeed.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1(a), 1(b) and 1(c) are fragmentary cross-sectional schematicviews of a semiconductor device during a manufacturing step thereofinvestigated by the present inventors, wherein FIG. 1(a) illustrates thedevice after completion of the formation steps of a semiconductorcircuit and a pad; FIG. 1(b) illustrates the device probed in a probetest step; and FIG. 1(c) illustrates the device after formation of arewiring layer;

FIG. 2 is a schematic plan view of a semiconductor device according to afirst embodiment of the invention;

FIG. 3 is a fragmentary cross-sectional schematic view of thesemiconductor device illustrated in FIG. 2;

FIG. 4 is a fragmentary schematic plan view of the semiconductor deviceillustrated in FIG. 2;

FIG. 5 illustrates a chart of the manufacturing steps of thesemiconductor device of the first embodiment of the invention;

FIG. 6 is a schematic plan view of a semiconductor wafer in the firstembodiment of the invention;

FIG. 7 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof illustrated inFIG. 5;

FIG. 8 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 7;

FIG. 9 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 8;

FIG. 10 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 9;

FIG. 11 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 10;

FIG. 12 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 11;

FIG. 13 is a schematic view illustrating the semiconductor device of thefirst embodiment of the invention mounted onto a mounting substrate;

FIG. 14 is a schematic plan view of a semiconductor device according toa second embodiment;

FIG. 15 is a fragmentary cross-sectional schematic view of thesemiconductor device illustrated in FIG. 14;

FIG. 16 is a fragmentary schematic plan view of the semiconductor deviceillustrated in FIG. 14;

FIG. 17 is a fragmentary cross-sectional schematic view of thesemiconductor device illustrated in FIG. 14 in which a plurality of padsof the semiconductor chip 1C and a plurality of the electrodes of asubstrate on which the semiconductor chip is mounted are electricallycoupled via a plurality of wires bonded to the bump electrode,respectively;

FIGS. 18(a), 18(b) and 18(c) are schematic plan views of the couplingstate of a wire, wherein FIG. 18(a) illustrates coupling of the wire toa pad via a bump electrode and FIGS. 18(b) and 18(c) each illustratesthe direct coupling of the wire to the pad;

FIG. 19 is a fragmentary cross-sectional schematic view of asemiconductor device during a manufacturing step thereof according to athird embodiment of the invention;

FIG. 20 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 19;

FIG. 21 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 20;

FIG. 22 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 21;

FIG. 23 is a fragmentary cross-sectional schematic view of asemiconductor device during a manufacturing step thereof according to afourth embodiment of the invention;

FIG. 24 is a fragmentary cross-sectional schematic of the semiconductordevice during a manufacturing step thereof following that of FIG. 23;

FIGS. 25(a), 25(b) and 25(c) are fragmentary cross-sectional schematicviews of a semiconductor device according to a fifth embodiment of theinvention, wherein FIG. 25(a) illustrates the structure of a rewiringlayer and a solder bump electrode; FIG. 25(b) illustrates the structureof a stud bump electrode; and FIG. 25(c) illustrates the structure of arewiring layer and a pad;

FIG. 26 is a fragmentary schematic plan view of the semiconductor deviceillustrated in FIG. 25(a);

FIG. 27 is a fragmentary cross-sectional schematic view of asemiconductor device during a manufacturing step thereof according to asixth embodiment of the invention;

FIG. 28 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 27;

FIG. 29 is a fragmentary cross-sectional schematic view of thesemiconductor device during a manufacturing step thereof following thatof FIG. 28;

FIGS. 30(a) and 30(b) are fragmentary schematic plan views of asemiconductor device according to a seventh embodiment of the invention,wherein FIG. 30(a) illustrates an opening portion on a pad having aconstriction and FIG. 30(b) illustrates a separated opening portion;

FIGS. 31(a) and 31(b) are fragmentary schematic plan views of asemiconductor device according to an eighth embodiment of the invention,wherein FIG. 31(a) illustrates probe regions arranged in a zigzag mannerand FIG. 31(b) illustrates probe regions arranged in a straight manner;

FIG. 32 is a fragmentary schematic plan view of a semiconductor deviceaccording to a ninth embodiment of the invention;

FIGS. 33(a), 33(b) and 33(c) are fragmentary schematic plan views of asemiconductor device according to a tenth embodiment of the invention,wherein FIG. 33(a) illustrates a bump electrode having a rectangularplanar shape, FIG. 33(b) illustrates a bump electrode having a polygonalplanar shape, and FIG. 33(c) illustrates a bump electrode having acircular planar shape;

FIGS. 34(a) and 34(b) are fragmentary cross-sectional schematic views ofa semiconductor device according to an eleventh embodiment of theinvention, wherein FIG. 34(a) illustrates a probe region separated froma coupling region and FIG. 34(b) illustrates a coupling region includinga probe region;

FIG. 35 is a cross-sectional schematic view of a semiconductor deviceduring a manufacturing step thereof according to a twelfth embodiment ofthe invention;

FIG. 36 is a cross-sectional schematic view of the semiconductor deviceduring a manufacturing step thereof following that of FIG. 35;

FIG. 37 is a cross-sectional schematic view of the semiconductor deviceduring a manufacturing step thereof following that of FIG. 36;

FIG. 38 is a cross-sectional schematic view of the semiconductor deviceduring a manufacturing step thereof following that of FIG. 37;

FIG. 39 is a cross-sectional schematic view of the semiconductor deviceduring a manufacturing step thereof following that of FIG. 38;

FIG. 40 is a schematic view illustrating one example of wire coupling ina stacked chip; and

FIG. 41 is a schematic view illustrating another example of wirecoupling in a stacked chip.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

Embodiments of the invention will hereinafter be described specificallybased on accompanying drawings. In all the drawings for describing theembodiments, members having a like function will be identified by a likereference numeral and repeating description may be omitted. In thedrawings for describing the following embodiments, hatching may beapplied even to a plan view in order to facilitate understanding of theconfiguration.

Embodiment 1

First, the configuration of a semiconductor device according to thisembodiment will be described referring to some drawings. FIG. 2 is aschematic plan view of the semiconductor device according to thisembodiment; FIG. 3 is a fragmentary cross-sectional schematic view ofthe semiconductor device illustrated in FIG. 2; and FIG. 4 is afragmentary schematic plan view of the semiconductor device shown inFIG. 2. FIG. 4 however illustrates the device after removal of a portionthereof.

The semiconductor device according to this embodiment is comprised of asemiconductor chip 1C having a BGA (Ball Grid Array) structure. Thesemiconductor chip 1C has, at the center portion thereof, bumpelectrodes 9 in the ball form arranged into a matrix. The bumpelectrodes 9 are each placed as an external electrode of thesemiconductor chip 1C so as to protrude from a passivation film 8 whichwill be a surface protective film. In FIG. 2, pads (electrodes) 2 placedat the periphery of the semiconductor chip 1C and a rewiring layer 7 forelectrically coupling the pads 2 and the bump electrodes 9 are coveredwith this passivation film 8 and they are indicated by dotted lines.

A semiconductor circuit (for example, LSI) which is not illustrated inthese diagrams is placed over the main surface (element formationsurface) of the semiconductor chip 10 having a rectangular shape. Thesemiconductor circuit is formed by a known technology by the so-calledfront-end steps (typical wafer process) and it is comprised of, forexample, MISFET (Metal Insulator Semiconductor Field Effect Transistor),resistor, capacitor and interconnects for electrically coupling theseelements.

The pads 2 which are electrically coupled to interconnects configuringthe semiconductor circuit and placed over the semiconductor chip 10(semiconductor circuit) are arranged at the periphery of thesemiconductor chip 10 having a rectangular shape. Each of these pads 2has, as illustrated by two regions partitioned by a broken line in FIG.4, a probe region 10A on the periphery side of the semiconductor chip 10and a coupling region 10B on the center side thereof.

A passivation film 3 is laid over the semiconductor chip 10(semiconductor circuit). This passivation film 3 is made of, forexample, a silicon nitride film which is an inorganic insulating filmand has an opening portion 11 on the probe region 10A and the couplingregion 10B of the pad 2. Over the pad 2 and the passivation film 3, apassivation film 5 is formed. This passivation film 5 is made of, forexample, a polyimide film which is an organic insulating film and has anopening portion 12 having a square plane shape over the coupling region10B of the pad 2.

As described above referring to FIG. 1, the probe region 10A of the pad2 placed on the periphery side of the semiconductor chip 1C relative tothe coupling region 10B has a probe mark 100 (external damage, recess)formed by the contact between the probe needle 4 and the pad 2 during aprobe test step. The rewiring layer 7 electrically coupled to the pad 2is, on the other hand, placed over the coupling region 10B and thepassivation film 5 via a seed film 6 (conductive film). In short, in thepad (electrode) 2 exposed from the passivation film (insulating film) 3,interconnect layers (the seed film 6 and the rewiring layer 7) which areconductive members are coupled to a region where the probe mark 100 isnot formed (the coupling region (second region) 10B which is more flatthan the probe region (first region) 10A in which the probe mark isformed). The rewiring layer 7 extends, via the seed film 6 (conductivefilm), from the coupling region 10B to the center side of thesemiconductor chip 1C. On the surface of the pad 2, by placing thecoupling region 10B on the center side of the semiconductor chip 1C andleading one end portion of the rewiring layer 7 opposite to the otherend portion which is coupled to the pad 2 toward the center side overthe main surface of the semiconductor chip 1C, the following advantagescan be achieved.

The interconnect layers (seed film 6 and rewiring layer 7) which areconductive members are coupled to a flat region on the surface of thepad 2 where no probe mark 100 is formed so that no probe mark (gap) 100appears on a current pathway. Such a semiconductor device has thereforeimproved electrical properties. When the probe region 10A exists betweenthe coupling region 10B and the center of the semiconductor chip 1C(below a pathway where interconnect layers (seed film 6 and rewiringlayer 7) are placed), a portion of the interconnect layers are pushed upby the convex portion 101 like a hump formed over the probe region 10Aas described above and exposed from the passivation film (insulatingfilm) 8 on the uppermost surface which will be formed later. This maypresumably deteriorate the reliability of the resulting semiconductordevice. Even if the coupling region 10B is placed on the periphery sideof the semiconductor chip 1C, there is no fear of the portion of theinterconnect layers (seed film 6 and rewiring layer 7) being exposedfrom the passivation film 8 insofar as the interconnect layers can beled to the peripheral side of the semiconductor chip 1C from the pad 2.Since the plural pads (electrodes) 2 are placed along each side of thesemiconductor chip 1C having a square plane, it is difficult to insertthe one end of the interconnect layer between the pad 2 and theperiphery of the semiconductor chip 1C. As shown in Embodiment 1, byplacing the coupling region 10B near the short side of the pad 2 havinga rectangular plane located on the center side on the main surface ofthe semiconductor chip 1C, exposure of a portion of the interconnectlayer from the passivation film 8 can be suppressed so that thesemiconductor device can have improved reliability.

The passivation film 8 serving as a protective film on the uppermostsurface is formed over the rewiring layer 7 and the passivation film 5.The passivation film 8 has an opening portion 13 over a portion of therewiring layer 7. The rewiring layer 7 has, over a portion thereof, abump electrode 9 which is in the ball form and protrudes from theopening portion 13.

The semiconductor chip 1C having such a structure can have the bumpelectrodes 9 with a pitch widened by the pad 2 for realizing pitchnarrowing and the rewiring layer 7 electrically coupled thereto. Inother words, the semiconductor device in this embodiment can achievesize reduction, particularly pitch narrowing by electrically coupled,via the pad 2 and the rewiring layer 7, the semiconductor circuit andthe bump electrode 9 serving as an external electrode.

In this embodiment, two regions are partitioned on the pad. They are theprobe region 10A, that is, a region (including the margin thereof) withwhich the probe 4 is brought into contact and the coupling region 10B,that is, a region (including the margin thereof) in which the seed film6 (conductive film) is formed on the pad 2 including the margin. Such aconfiguration makes it possible to avoid loss of the rewiring layer 7and/or the seed film 6 as described above referring to FIG. 1 due to theinfluence of the probe mark 100 formed during the probe test step and inaddition, to suppress exposure of the rewiring layer 7 as shown by theconvex portion 101 from the passivation film 8.

In this embodiment, the pad 2 has a rectangular plane with a long sideextending from the periphery side to the center side of thesemiconductor chip 1C. In the pad 2, the size 2 a is set at, forexample, 130 μm; the size b is set at, for example, 75 μm; and the pitch2 c is set at 80 μm. By using, as the pad 2, such a pad having arectangular planar shape, size reduction, particularly, pitch narrowingcan be achieved. In this Embodiment, the pads 2 are arranged in a zigzagmanner at the periphery of the rectangular semiconductor chip 1C. Thisenables to achieve narrower pitching. For example, the pitch 2 d betweenthe outer pad 2 and the inner pad 2 is set at 40 μm.

Thus, this embodiment is useful for achieving size reduction,particularly narrow pitching of a semiconductor device so that asemiconductor circuit to be disposed on a semiconductor chip 1C can havemultiple functions and a high pin count (multiple input/output)necessary for it can be realized.

As well as the method as shown in this embodiment, another method isusable for separating a probe region from a coupling region ofconductive members (wire and rewiring layer). However, the more distantthese regions are, the more impossible the miniaturization of thesemiconductor device. In addition, the polyimide film from which aportion of the pad is exposed is an organic insulating film having alower hardness than that of a metal so that it is inferior in processingaccuracy to a metal material and the opening portion has an inclinedside surface when viewed cross-sectionally. When a pad is formed whileseparating it into two regions, it is necessary to form a larger pad inconsideration of the inferior processing accuracy of the polyimide film.Use of such a large pad is not suited for miniaturization of asemiconductor device compared with use of only one rectangular pad asdescribed in this embodiment.

A manufacturing method of the semiconductor device according to thisembodiment will next be described referring to some drawings. FIG. 5 isa flow chart of manufacturing steps of the semiconductor device of thisembodiment; FIG. 6 is a schematic plan view of a semiconductor wafer inthis embodiment; and FIGS. 7 to 12 are each a fragmentarycross-sectional schematic view of the semiconductor device duringmanufacturing steps thereof described in FIG. 5.

A semiconductor wafer 1W as illustrated in FIG. 6 having a deviceformation region 50 in which a semiconductor circuit is formed isprepared (S10). In this diagram, a scribe region 51 is illustrated. Thesemiconductor wafer 1W will be cut into individual semiconductor chips1C along the scribe region 51 in the later step.

Described specifically, prepared is a semiconductor wafer 1W equippedwith a plurality of device formation regions 50 (chip regions) having asemiconductor circuit (semiconductor element), a pad (electrode) 2electrically coupled to the semiconductor circuit, and a passivationfilm (insulating film) 3 formed on the pad 2 so as to expose a portionof the pad 2. The pad 2 has a probe region (first region) 10A on theperiphery side of the device formation region 50 and a coupling region(second region) 10B which is adjacent to the probe region 10A and is onthe center side of the chip region relative to the probe region 10A.This semiconductor wafer 1W is, for example, a single crystal Sisubstrate having a circular planar shape. Each semiconductor chip 1Chaving a rectangular planar shape (refer to FIG. 2) is diced out from aplurality of the device formation regions of the semiconductor wafer.The semiconductor wafer 1W is not limited to a Si substrate but may beany of compound semiconductor substrates such as GaAs substrate and SiCsubstrate.

Then, a semiconductor circuit is formed over the main surface of thesemiconductor wafer 1W in a known manner (S20). The semiconductorcircuit is comprised of, for example, various semiconductor elementssuch as n channel or p channel MISFET (Metal Insulator SemiconductorField Effect Transistor), resistor, and capacitor and interconnects(multilayer interconnects) for electrically coupling them.

Then, the pad 2 having the probe region (first region) 10A on theperiphery side of the device formation region and the coupling region(second region) 10B which is adjacent to the probe region 10A and is onthe center side of the device formation region relative to the proberegion 10A is formed over the semiconductor wafer 1W while electricallycoupling it to an interconnect configuring the semiconductor circuit(S30). The pad 2 is in a rectangular shape having a long side extendingfrom the periphery side to the center side of the device formationregion (which will be the semiconductor chip 1C later) as illustrated inFIG. 2 and FIG. 4. In addition, dummy pads 2A as illustrated in FIG. 4having a size almost equal to that of the probe region 10A of the pad 2are formed in alignment. The dummy pads 2A are formed in the row of theprobe region 10A of the pad 2 in order to adjust the probing positionand they are floating.

The pad 2 has, for example, aluminum (Al) as a main conductive layer. Itmay have a structure in which the Al film serving as a main conductivelayer is sandwiched between barrier conductive films each comprised of afilm stack of a Ti film and a TiN film. Such an interconnection can beformed by successively depositing the lower barrier conductive film, theAl film, and the upper barrier conductive film and then dry etching themwith a photoresist film patterned by photolithography as a mask.

Then, a passivation film 3 (first insulating film) is formed over thesemiconductor wafer 1W (S40). This passivation film 3 is made of, forexample, a film stack of a silicon oxide film and a silicon nitride filmwhich are inorganic insulating films and the film stack can be formed,for example, by plasma CVD (Chemical Vapor Deposition). With aphotoresist film (not illustrated) patterned by photolithography as amask, the passivation film 3 is dry-etched to expose therefrom the proberegion 10A and the coupling region 10B of the pad 2. By this exposure,the passivation film 3 has an opening portion 11. Of the opening portion11, an exposure region of the probe region 10A is, for example, 60 μm(size 11 a)×70 μm (size 11 c) and an exposure region of the couplingregion 10B is, for example, 60 μm (size 11 b)×70 μm (size 11 c). Inaddition, an opening portion 14 is formed on the dummy pad 2A asillustrated in FIG. 4. It has a similar size to that of the probe region10A of the opening portion 11.

Then, a probe test of the semiconductor circuit is performed (S50). Forexample, as illustrated in FIG. 8, a cantilever type probe needle 4 isbrought into contact with the pad 2 of the probe region 10A to measurevarious electrical properties. At this time, a probe mark 100 (externaldamage) by the probe needle 4 remains on the surface of the pad 2. Theprobe needle 4 is made of a hard metal such as W (tungsten) and has asharp top so that it inevitably gives damage as the probe mark 100 onthe surface of the pad 2 having an Al film as a main conductive layer.

In this embodiment, the pad 2 has a rectangular planar shape and it hasthe probe region 10A on the periphery side of the semiconductor chip 1Cand the coupling region 10B on the center side of the semiconductor chip1C. The probe needle 4 is brought into contact with only the proberegion 10A. The probe mark 100 is therefore present only on the pad 2 ofthe probe region 10A.

In this embodiment, dummy pads 2A having a similar size to that of theprobe region 10A of the pad 2 and arranged in alignment are formedsimultaneously with the formation of the pad 2 (refer to FIG. 4). Theprobe test is performed with this dummy pad 2A as a target so that shiftof the probe needle 4 from the probe region 10A to the coupling region10B can be prevented. In short, the probe mark 100 is always present onthe pad 2 of the probe region 10A.

The probe test includes not only tests at operation guaranteetemperatures (for example, from −40 to 125° C.) at normal temperature,high temperature, and low temperature but also tests for each functionbecause semiconductor devices have multiple functions. In a plurality oftesting apparatuses (testers), the probe needle 4 is inevitably broughtinto contact with the same pad 2 a plurality of times. In addition, theprobe test also includes a so-called wafer level burn in so that avoltage is applied to a semiconductor circuit by bringing the probeneedle 4 into contact with the pad 2 of the probe region 10A for longhours (for example, several hours) under a high-temperature environment(high-temperature baking) at a temperature around the melting point of asolder (200° C. or greater). This may enlarge the probe mark 100. Evenin this case, however, it is possible to limit the presence of the probemark 100 to the pad 2 of the probe region 10A in this Embodiment.

The probe test may be performed after formation of the bump electrode 9,but in this case it is impossible to carry out a test similar to theprobe test on the pad 2 because of a change in the surface condition(oxidation) of a solder due to a temperature history or limitation ofthe high-temperature baking temperature due to the influence of themelting point of the solder.

Then, a passivation film 5 (second insulating film) is formed over thesemiconductor wafer 1W (S60). This passivation film 5 is made of, forexample, a polyimide film which is an organic insulating film and can beformed, for example, by spin coating. Then, as illustrated in FIG. 9,with a photoresist film (not illustrated) patterned by photolithographyas a mask, the passivation film 5 is wet-etched to expose therefrom thecoupling region 10B of the pad 2. By this exposure, the passivation film5 has an opening portion 12. Of the opening portion 12, an exposureregion of the coupling region 10B has a square planar shape and is, forexample, 45 μm (size 12 a)×45 μm (size 12 b).

Then, as illustrated in FIG. 10, a seed film 6 (interconnect layer,conductive film, plating layer) electrically coupled to the pad 2 isformed over the coupling region 10 b and the passivation film 5 (S70).The seed film 6 serves as a seed film for a conductive film, which willbe formed in later by plating, and it is made of, for example, a Pd filmby electroless plating. The seed film 6 may be composed of a Pd/Ti film,a Ti film, or a TiN film deposited by sputtering. These films are alsoconductive films having a barrier property against Cu diffusion.

Then, as illustrated in FIG. 11, after formation of a resist film overthe semiconductor wafer 1W by the method of application, the resist filmis patterned by photolithography into a mask 16 having an openingportion 15 for the formation of a rewiring layer. From the openingportion, a portion of the seed film 6 is exposed.

A rewiring layer 7 made of a conductive film (interconnect layer,plating film) is formed over the seed film 6 by electroplating (S80).More specifically, the rewiring layer 7 is formed over the couplingregion 10B and the passivation film 5 so as to extend and hug from thecoupling region 10B to the center side of the semiconductor chip 1Cwhile electrically coupling to the pad 2. The rewiring layer 7 is madeof a Cu film or a Ni/Cu film. Then, the mask 16 made of the resist filmis removed by asking. With the rewiring layer 7 as a mask, the seed film6 is wet etched to leave a portion of the seed film 6 below the rewiringlayer 7 and remove the other portion of the seed film 6 below the mask16.

As illustrated in FIG. 12, a passivation film 8 (third insulating film)is formed over the semiconductor wafer 1W (S90). This passivation film 8is made of, for example, a polyimide film which is an organic insulatingfilm and can be formed, for example, by spin coating. In thisembodiment, this passivation film 8 is a protective film of theuppermost surface. To achieve good coverage, it is thicker than thepassivation film 5. Then, with a photoresist film (not illustrated)patterned by photolithography as a mask, wet etching of the passivationfilm 8 is performed to expose therefrom a portion of the rewiring layer7. By this exposure, the passivation film 8 has an opening portion 13.When a photosensitive polyimide is used as a material of the passivationfilm 8, the opening portion 13 is formed by photo processing. Employmentof the photo processing technology enables microfabrication of theopening portion 13 compared with that formed by wet etching.

Then, an Au film which is not illustrated is formed on the rewiringlayer 7 exposed from the opening portion 13 by electroless plating atone end portion of the conductive film (interconnect layer, platingfilm) on the side opposite to the other end portion of the conductivefilm coupled to the coupling region (second region) 10B of the pad 2 asillustrated in FIG. 3. After printing a solder paste over thesemiconductor wafer 1W by solder printing technology, the solder pasteis melted and recrystallized by reflow treatment and a bump electrode(conductive member, solder ball) 9 which serves as an external terminalis formed on the Au film (S100). As the solder paste, Pb (lead) freesolder made of, for example, Sn (tin), Ag (silver) and Cu can be used.The bump electrode 9 can also be formed by supplying a solder ball whichhas been formed in advance onto the opening portion 13 instead of usingthe solder paste and then subjecting the semiconductor wafer 1W toreflow treatment. The reflow treatment of the solder paste prevents theAu film from diffusing to the bump electrode 9.

Then, the semiconductor wafer 1W is cut along the scribe (dicing) regionbetween the device formation regions (between the chip regions adjacentto each other) and separated into individual semiconductor chips 1C asillustrated in FIG. 2, whereby the semiconductor device of thisembodiment is completed. For example, as illustrated in FIG. 13, thesemiconductor chip 1C can be mounted on a substrate 52 via the bumpelectrode 9. Described specifically, various semiconductor devices canbe formed by placing the semiconductor chip 1C on the substrate 52,reflowing the bump electrode 9 on an electrode 53 thereof, and fillingan underfill resin 54 between the semiconductor chip 1C and thesubstrate 52.

The pitch and size of the pads at the coupling portion are reduced inorder to achieve multifunction (increase in the number of pins) andmicrofabrication (downsizing of chip). The pad size can be reduced, forexample, by controlling the probing accuracy and size of a probe mark.

By the technical innovation, the pad pitch (size) is reduced, but it isdifficult to drastically reduce the size of a probe mark judging fromthe contact property in the probe test step or influence of electricalresistance of probing

As the probing system, a cantilever system as shown in the presentembodiment is being replaced by a vertically movable system. Furthertechnical development of a probing system is however necessary judgingfrom the cost and contact property.

As illustrated in FIG. 1(c), when the pad 2 and the rewiring layer 7 arebrought into contact on the probe mark 100, a pore 102 is inevitablyformed inside due to insufficient formation of a plating film. This pore102 deteriorates electrical properties after fabrication and theformation of unevenness by plating may cause inconveniences such asshort-circuit with an adjacent pad or exposure of the rewiring layer 8from the surface (convex portion 101).

In this embodiment, by partitioning the probing region 10A to be probedfrom the coupling region 10B where the pad and the rewiring layer 7 arecoupled and providing a sufficient space for these regions, limitationto probing properties is relaxed. In addition, with a view tocontrolling the probing position, dummy pads 2A are arranged in the sameline with the probe region 10A of the pad 2. This enables to use thecantilever system probing so that the contact property can be ensuredwithout limiting the probe test system. The performances of productsincluding analog characteristics, requirement for which will be severerin future, can be satisfied fully.

Embodiment 2

In the above embodiment, the rewiring layer is comprised of a conductivefilm (plating film) formed by plating. In this embodiment, on the otherhand, a bump electrode is made of a plating film. Embodiment 2 issimilar to Embodiment 1 except for the above-described difference.

The configuration of the semiconductor device according to thisembodiment will be described first referring to some drawings. FIG. 14is a schematic plan view of the semiconductor device according to thisembodiment; FIG. 15 is a fragmentary cross-sectional schematic view ofthe semiconductor device illustrated in FIG. 14; and FIG. 16 is afragmentary schematic plan view of the semiconductor device illustratedin FIG. 14.

A rectangular semiconductor chip 1C configuring the semiconductor deviceof this embodiment has, on the main surface thereof, a semiconductorcircuit (for example, LSI) not illustrated. A pad 2 electrically coupledto an interconnect configuring the semiconductor circuit and placed onthe semiconductor chip 1C (semiconductor circuit) is placed at theperiphery of the rectangular semiconductor chip 1C and this pad 2 has,thereover, a bump electrode 17. As shown in FIG. 16 by two regionspartitioned by a broken line, the pad 2 has a coupling region 10B on theperiphery side of the semiconductor chip 1C and a probe region 10A onthe center side. By placing the coupling region 10B on the peripheryside of the semiconductor chip 1C, a wire (conductive member) can beextended easily outside the semiconductor chip 1C from the bumpelectrode 17 formed over the coupling region 10B.

This means that it becomes possible to decrease the length of each of aplurality of wires 57 (conductive members) for electrically coupling aplurality of electrodes 56 (bonding leads) formed on the main surface(upper surface) of a substrate 55 (wiring substrate) and a plurality ofpads 2 formed over the main surface (surface) of the semiconductor chip1C mounted on the main surface (upper surface) of the substrate 55. Thisleads to improvement in the electrical properties of a semiconductordevice.

In this Embodiment, the coupling region 10B of the wire 57 is placed onthe circumferential side of the semiconductor chip 1C on the surface ofthe pad 2 relative to the probe region 10A. The position of the couplingregion 10B is not limited to the above-described one, but may bedisposed on the center side of the semiconductor chip 1C relative to theprobe region 10A and one end portion (ball 20) of the wire 57 may becoupled to it via a bump electrode 17. In consideration of the distanceto the electrode 56 (bonding lead) formed on the main surface of thesubstrate 55 (wiring substrate), the coupling region 10B and the bumpelectrode 17 are preferably placed on the circumferential side becausethe length of the wire 57 can be decreased.

A passivation film 3 is formed on the semiconductor chip 1C(semiconductor circuit). This passivation film 3 is made of, forexample, a silicon nitride film which is an inorganic insulating filmand has an opening portion 11 on the pad 2 in the probe region 10A andthe coupling region 10B. A passivation film 18 is formed on the pad 2and the passivation film 3. This passivation film 18 is made of, forexample, a polyimide film which is an organic insulating film and it hasan opening portion 21 on the pad 2 in the coupling region 10B.

On the pad 2 in the probe region 10A placed on the center side of thesemiconductor chip 10 relative to the coupling region 10B, there is aprobe mark 100 (external damage) caused by the contact of a probe needle4 with the pad 2 in the probe test step as described referring toFIG. 1. On the other hand, the bump electrode 17 is placed, via a seedfilm 19 (conductive film), on the coupling region 10B and thepassivation film 3 while being electrically coupled to the pad 2. Inthis embodiment, the bump electrode 17 has a rectangular planar shape(refer to FIG. 16), but it may have a polygonal or a circular planarshape. The planar shape is not limited insofar as it enables wirebonding from the bump electrode 17.

In this embodiment, the plane shape of the pad 2 is a rectangular shapehaving a long side extending from the periphery side to the center sideof the semiconductor chip 10. For example, the size 2 a of the pad 2 isset at 130 μm, and the size 2 b is set at 75 μm. The pitch 2 c of thepad 2 is set at 80 μm. By using the pad having a rectangular planarshape, size reduction, particularly narrow pitching of a semiconductordevice can be achieved. In this embodiment, the pads 2 are arranged in azigzag manner at the periphery of the rectangular semiconductor chip 1C.This is useful for achieving narrow pitching. For example, the pitch 2 dbetween the outer pad 2 and the inner pad 2 is set at 40 μm.

Electrical coupling of the wire 57, which is a conductive member, to thesemiconductor chip 1C in this embodiment will next be describedreferring to some drawings. FIG. 17 is a fragmentary cross-sectionalschematic view of the semiconductor device illustrated in FIG. 14 inwhich a plurality of pads 2 of the semiconductor chip 1C and a pluralityof the electrodes 56 (bonding leads) of the substrate 55 (wiringsubstrate) on which the semiconductor chip 1C is mounted areelectrically coupled via a plurality of wires bonded to the bumpelectrode 17, respectively. FIGS. 18(a), 18(b), and 18(c) are schematicplan views of the coupling state of the ball 20 of the wire 57, in whichFIG. 18(a) illustrates the ball coupled to the pad 2 via the bumpelectrode 17, while FIGS. 18(b) and 18(c) each illustrates the directcoupling of the ball to the pad 2. In each of FIGS. 18(a), 18(b) and18(c), the pad before wire bonding is illustrated on the left side,while the pad after the wire bonding is illustrated on the right side.

In this Embodiment, the pad 2 has a rectangular shape so as to realizenarrow pitching. As illustrated in FIGS. 18(a) and 18(c), regions 20 aand 20C (shown by a broken line) including the misalignment of the wirebonding extend to each opening portion 11, that is, the passivation film3.

In FIG. 18(c), when the ball 20 is electrically coupled to the pad 2 inthe region 20 c including the misalignment of wire bonding, the ball 20runs on the passivation film 3 and becomes a cause of crack of thepassivation film 3 around the ball 2. This occurs because of a stepdifference between the surface (upper surface) of the passivation film 3and the surface (upper surface) of the pad 2 in the opening portion 11of the passivation film 3. When one end portion of the wire is coupledto the pad 2, the wire runs on the passivation film 3 due to themisalignment. If a load is applied under such a condition, cracks appearin one portion of the passivation film 3.

As illustrated in FIG. 18(b), it is therefore possible to prevent theball 20 from running on the passivation film 3 by reducing the diameterof the ball 20, thereby decreasing the area of the region 20 b includingthe misalignment of the wire bonding. A reduction in the coupling areaof the ball 20 may lead to deterioration in the strength.

In this embodiment, as illustrated in FIG. 18(a) and FIG. 17, the bumpelectrode 17 is formed on the pad 2. Even if the center of the one endportion of the wire is off from the center of the bump electrode 17 whenthe one end portion of the wire is coupled onto the bump electrode 17,the one end portion of the wire can be coupled without causingdeformation because the bump electrode 17 has a flat surface (uppersurface, wire coupling surface). Even if a load is applied under such acondition, the back side (lower surface, a surface to be coupled to thepad 2) of the bump electrode 17 opposite to the surface is coupled onlyto the coupling region 10B which is a flat region on the pad 2 so thatduring wire coupling, no load is applied to a portion (opening portion11) of the passivation film 3 from which the pad 2 is exposed and cracksof the passivation film 3 can be prevented.

Next, a manufacturing method of the semiconductor device of thisembodiment will be described referring to some drawings.

FIGS. 19 to 22 are fragmentary cross-sectional schematic views of asemiconductor device during manufacturing steps thereof according tothis embodiment. The step described with reference to FIG. 19 followsthe step described in Embodiment 1 with reference to FIG. 7 so that thedescription of it is omitted.

As illustrated in FIG. 19, a passivation film 18 is formed over thesemiconductor wafer 1W. This passivation film 18 is made of, forexample, a polyimide film which is an organic insulating film and can beformed, for example, by spin coating. Then, with a photoresist film (notillustrated) patterned by photolithography as a mask, wet etching isperformed to expose the passivation film 3 around the pad 2 from thepassivation film 18 (refer to FIG. 20). By this exposure, thepassivation film 18 has an opening portion 21. In the presentembodiment, the pad (electrode) 2 is made of, for example, an Al film.When a photosensitive polyimide is used as a material of the passivationfilm 8, the opening portion 13 is formed by photo processing. Use of thephoto processing technology enables microfabrication of the openingportion 13.

Then, a probe test of the semiconductor circuit is performed. Forexample, as illustrated in FIG. 20, a cantilever system probe needle 4is brought into contact with the pad 2 of the probe region 10A tomeasure various electrical properties. At this time, a probe mark 100(external damage) due to the probe needle 4 remains on the surface ofthe pad 2.

Then, as illustrated in FIG. 21, a seed film 19 is formed over thesemiconductor wafer 1W while electrically coupling it to the pad 2. Theseed film 19 is a seed film for a conductive film formed later byplating and is made of a Cu film deposited by sputtering.

Then, as illustrated in FIG. 22, after a resist film is formed over thesemiconductor wafer 1W by the method of application, the resist film ispatterned by photolithography to form a mask 23 having a rewiringlayer-forming opening portion 22 from which a portion of the seed film19 is exposed. Then, a bump electrode 17 made of a conductive film (aplating film) is formed on the seed film 19 by electroplating. Describedspecifically, the bump electrode 17 is electrically coupled to the pad 2on the coupling region 10B. The bump electrode 17 is made of, forexample, an Au film. Use of Au as a material of the bump electrode 17enables to improve the bondability to the wire made of an Au. Directcoupling of a wire made of Au to the pad 2 made of Al may causediffusion of Au in Al, contaminate the bonded surface (bonded region)with the wire on the pad 2 made of Al, and deteriorate the bondingstrength of the wire. In this embodiment, however, deterioration in thebonding strength of a wire can be suppressed because a Pd film is formedon a Ni film as the seed film (interconnect layer, conductive film,plating layer) 19 on the surface of the pad 2 made of Al and the bumpelectrode 17 made of Au is formed on this seed film.

Then the mask 23 made of a resist film is removed by asking and with thebump electrode 17 as a mask, the seed film 19 is wet etched to leave aportion of the seed film 19 below the bump electrode 17 but remove theother portion of the seed film 19 below the mask 23 (refer to FIG. 15).

The semiconductor wafer 1W is then cut along the scribe region (dicing)between the device formation regions into individual semiconductor chips1C as illustrated in FIG. 14, whereby a semiconductor device accordingto this embodiment is completed. By using the semiconductor deviceaccording to this embodiment, various semiconductor devices can beformed by wire bonding and electrically coupling an external terminaland the bump electrode 17 and sealing the semiconductor chip 1C with aresin.

Embodiment 3

In Embodiment 1, the bump electrode is formed on a portion of therewiring layer by using solder printing technology. In the presentembodiment, on the other hand, a pad is formed on a portion of arewiring layer by using plating. Embodiment 3 is similar to Embodiment 1except for the above-described difference.

FIGS. 23 and 24 are each a fragmentary cross-sectional schematic view ofa semiconductor device during manufacturing steps thereof according tothis embodiment. The step described referring to FIG. 23 follows thestep described in Embodiment 1 referring to FIG. 11 so that stepssubsequent thereto will hereinafter be described.

As illustrated in FIG. 23, a resist film formed by the method ofapplication over the semiconductor wafer 1W is patterned byphotolithography to form a mask 24 having an opening portion 25 fromwhich a portion of a rewiring layer 7 comprised of, for example, a Cu/Nifilm is exposed. Then, a pad 26 made of a conductive film (plating film)is formed by electroplating on the rewiring layer 7. More specifically,the pad 26 is electrically coupled to the rewiring layer 7 and it ismade of, for example, an Au film. When the rewiring layer 7 is made of aCu film, the pad 26 may be made of a Ni/Au film. In addition, a seedfilm or a plating layer made of, for example, a Pd or Ni film isdisposed in order to provide a barrier property against diffusion of Alof the pad material.

As illustrated in FIG. 24, the mask 24 made of the resist film is thenremoved by asking and with the rewiring layer 7 as a mask, the seed film6 is wet etched to leave a portion of the seed film 6 below the rewiringlayer 7 and remove the other portion of the seed film 6 below the mask24.

The semiconductor wafer 1W is then cut along the scribe (dicing) regionbetween the device formation regions into individual semiconductorchips, whereby the semiconductor device according to this embodiment iscompleted. Various semiconductor devices can be formed, for example, byelectrically coupling an external terminal to the pad 26 by wire bondingand then sealing the semiconductor chip with a resin. A contactresistance can be reduced by forming an Au film on the surface of therewiring layer 7, followed by wire bonding to the Au film.

For example, when the entirety of the rewiring layer 7 is made of an Aufilm, adhesion of it with a molding resin cannot be ensured at the timeof fabrication of a package. In this embodiment, therefore, thesemiconductor device can have high reliability by forming the pad 26made of an Au film only at a position where wire bonding is performed.

In the formation step of the pad 26 including an Au film, a thin filmformation technology such as electroless plating, sputtering or metalprinting can be employed if a mask made of, for example, a resist isformed for the formation of the pad 26 after removal of the seed film 6.

The Ni film below the Au film forms the pad 26 but it may form therewiring layer 7. The influence of warpage of a wafer (chip) due to theNi film having a large film stress can be reduced by configuring the pad26 from the Ni film than by configuring the rewiring layer 7 therefrom.

The pad 26 comprised of a Cu/Ni/Au film may be formed on the rewiringlayer made of a Cu film in consideration of interfacial coupling ofCu/Ni.

Embodiment 4

In Embodiments 1 to 3, a conductive film (plating film) is not formed onthe pad of a probe region by plating. In this embodiment, on the otherhand, a coupling region is extended and a plating film is formed also onthe pad of a probe region. Embodiment 4 is similar to Embodiments 1 to 3except for the above difference.

FIGS. 25(a), 25(b), and 25(c) are fragmentary cross-sectional schematicview of a semiconductor device according to this embodiment, whereinFIG. 25(a) illustrates the structure of a rewiring layer and a solderbump electrode; FIG. 25(b) illustrates the structure of a stud bump; andFIG. 25(c) illustrates the structure of a rewiring layer and a pad.FIGS. 25(a), 25(b), and 25(c) are fragmentary cross-sectional schematicviews of the semiconductor device of this embodiment corresponding tothose of FIGS. 3, 15 and 24, respectively. FIG. 26 is a fragmentaryschematic plan view of the semiconductor device illustrated in FIG.25(a). FIG. 26 illustrates the device after removal of a portionthereof. The structure of the stud bump electrode illustrated in FIG.25(b) can be employed also for Au—Au bonding for flip chip mounting,Au-solder bonding, or ACF bonding.

As illustrated in FIG. 25(a) and FIG. 26, a coupling region 10B to whicha pad 2 and a rewiring layer 7 are coupled via a seed film 6 includesthe probe region 10A to which the probe is brought into contact with thepad 2 in the probe test step. This means that the rewiring layer 7formed by plating is also laid over the pad 2 in the probe region 10A.This enables to avoid exposure of Al, thereby preventing corrosion of Alconfiguring the pad 2.

As described referring to FIG. 1, deterioration in the contact propertyof the seed film 6 due to step difference of the probe mark 100 maydeteriorate the flatness of the rewiring layer 7 formed by plating. Inthe present embodiment, therefore, the contact property between the pad2 and the rewiring layer 7 is ensured and a flat ratio of the rewiringlayer over the pad 2 is improved by widening the area of the pad 2.

Similarly, in FIGS. 25(b) and 25(c), the contact property between thepad 2 and the plating film (bump electrode 17, rewiring layer 7) can beensured and a flat ratio of the rewiring layer over the pad 2 can beimproved by widening the area of the pad 2.

Embodiment 5

In Embodiment 2, a conductive layer (plating film) made of a singlelayer is formed over the pad by plating. In the present embodiment, onthe other hand, plating is repeated to form a multilayer conductivefilm. Embodiment 5 is similar to Embodiment 2 except for the abovedifference.

FIGS. 27 to 29 are fragmentary cross-sectional schematic views of asemiconductor device during manufacturing steps thereof according tothis embodiment. The step described referring to FIG. 27 follows thestep described in Embodiment 2 referring to FIG. 21 so that the stepssubsequent thereto will next be described.

As illustrated in FIG. 27, after formation of a resist film over thesemiconductor wafer 1W by the method of application, the resist film ispatterned by photolithography to form a mask 27 having an openingportion 28 for exposing therefrom a portion of a seed film 19 made of aCu film. A planar region having this opening portion 28 is greater thanthe planar region of the pad 2 having an Al film as a main conductivelayer.

Then, a conductive film 29 (plating film) is formed on the seed film 19by electroplating. More specifically, the conductive film 29 iselectrically coupled to a pad 2 via the seed film 19 and it is made of,for example, an Au film. The mask 27 made of the resist film is thenremoved by asking.

As illustrated in FIG. 28, after formation of a resist film over thesemiconductor wafer 1W by the method of application, the resist film ispatterned by photolithography to form a mask 30 having an opening 31 forexposing therefrom a portion of the conductive film 29 made of the Aufilm. Then, a bump electrode 17 made of a conductive film (plating film)is formed over the conductive film 29 by electroplating. Morespecifically, the bump electrode 17 is electrically coupled to the pad 2and it is made of, for example, an Au film. In this embodiment, theconductive film 29 and the bump electrode 17 are stacked by plating.Then, the mask 30 made of the resist film is removed by ashing.

The planar shape of the bump electrode 17 may be any planar shapeinsofar as it enables wire bonding from the bump electrode 17. It may berectangular, polygonal or circular. It is preferably a shape permittingan increase in the contact area (maximum size shape).

As illustrated in FIG. 29, the seed film 19 is then wet etched with theconductive film 29 as a mask to leave a portion of she seed film 19below the conductive film 29 and remove the other portion of the seedfilm 19. The semiconductor wafer 1W is then cut along a scribe (dicing)region between partitioned device formation regions into individualsemiconductor chips 1G, whereby the semiconductor device according tothe present embodiment is completed.

Various semiconductor devices can be fabricated by using thesemiconductor device according to this embodiment, electrically couplingan external terminal and the bump electrode 17 by wire bonding. Uponwire bonding, Au—Au bonding can be performed at lower temperature andunder a lower load compared with Al—Au bonding so that damage caused byit is lower. In other words, in the present embodiment, wire bonding canbe performed at low temperature because the bump electrode 17 made of anAu film is placed on the conductive film 29 made of an Au film. An Al/Aualloy grows and becomes fragile (deteriorates) so that in thisembodiment, the formation of an Al/Au alloy is avoided or suppressed bythe effect of the seed film or a barrier metal layer made of a platinglayer, thereby improving the reliability of wire bonding coupling.

In this embodiment, the conductive film 29 and the bump electrode 17 arestacked by plating. By coating the entire surface of the pad 2 made ofAl with the conductive film 29, the pad 2 can have improved resistanceto Al corrosion. In addition, the bump electrode 17 is made higher by aheight 17 a than the passivation film 18 serving as a surface protectivefilm, whereby contact of a ball (stitch portion) for wire bonding withthe periphery of, for example, the passivation film 18 can be prevented.

Embodiment 6

In Embodiment 1, the limitation of probing property is relaxed bypartitioning the pad into the probing region to be probed and thecoupling region where the pad and the rewiring layer are coupled andproviding sufficient areas for them. In Embodiment 6, the pad ispartitioned more definitely into the probe region and the couplingregion. Embodiment 6 is similar to Embodiment 1 except for the abovedifference.

FIGS. 30(a) and 30(b) are fragmentary schematic plan views of asemiconductor device according to this embodiment, wherein FIG. 30(a)illustrates the opening portion 11 on the pad having a constriction andFIG. 30(b) illustrates the separated opening portion 11. FIGS. 30(a) and30(b) illustrate the device after removal of a portion thereof.

Compared with the configuration as described in Embodiment 1 referringto FIG. 4, the pad is partitioned more definitely into the probe region10A and the coupling region 10B in which the pad 2 and the rewiringlayer 7 are coupled by the opening portion 11 formed in the passivationfilm 3 (also refer to FIG. 3). This makes it possible to take a moreeffective measure against loss of the rewiring layer 7 (seed film 6)which is described referring to FIG. 1 and occurs by the influence ofthe probe mark 100 formed during the probe test step. In addition,exposure of the rewiring layer 7 from the passivation film 8 which isillustrated as the convex portion 101 can be suppressed effectively.

Embodiment 7

In Embodiment 1, the pad has a rectangular planar shape, but in thisembodiment, the pad has a convex planar shape. Embodiment 7 is similarto Embodiment 1 except for the above-described difference.

FIGS. 31(a) and 31(b) are fragmentary schematic plan views of asemiconductor device according to this embodiment, wherein FIG. 31(a)illustrates the probe regions arranged in a zigzag manner and FIG. 31(b)illustrates the probe regions arranged in a straight manner. FIG. 31illustrates the device after removal of a portion thereof.

In this embodiment, the probe region 10A to be probed is made smallerthan the coupling region 10B wherein the pad 2 and the rewiring layer 7are coupled to each other. For example, when cantilever system probingis employed, a probe needle 4 is brought into contact with the pad whileshifting in one direction as described referring to FIG. 8, the probemark 100 extends in this direction. The probe region 10A therefore needsonly a region in one direction to which the probe mark 100 extends. Onthe other hand, the coupling region 10B must have a sufficient contactarea for reducing the contact resistance with the rewiring layer 7 sothat it is greater than the region with which the probe needle 4 isbrought into contact. As illustrated in FIG. 31, a protruding region(upper portion) of the pad 2 having a convex planar shape is designatedas the probe region 10A and the other region (lower portion) isdesignated as the coupling region 10B.

Thus, by making the area of the probe region 10A to be probed smallerthan that of the coupling region 10B wherein the pad 2 and the rewiringlayer 7 are coupled, it is possible to achieve size reduction,particularly, narrow pitching of a semiconductor device.

In the case of an area I/O (Input/Output) having a leading space at theperiphery, the rewiring layer 7 can be led in both directions. Asillustrated in FIG. 31(b), by arranging the probe regions 10A in astraight line, it is possible to achieve size reduction, particularly,narrow pitching of a semiconductor device.

Embodiment 8

In Embodiment 1, the opening portion formed on the pad to couple withthe rewiring layer has a square planar shape. In this embodiment, anopening portion having a rectangular planar shape is also described.Embodiment 8 is similar to Embodiment 1 except for the above-describeddifference.

FIG. 32 is a fragmentary schematic plan view of a semiconductor deviceaccording to this embodiment. FIG. 32 illustrates the device afterremoval of a portion thereof. In the present embodiment, there are twoopening portions, that is, an opening portion 12 having a square planarshape which is similar to the opening portion 12 described in Embodiment1 referring to FIG. 4 and formed on the pad 2 to couple with therewiring layer; and a rectangular opening portion 12A smaller than thesquare opening portion 12. When coupling of the pad 2 and the rewiringlayer 7 is not limited to low-resistance coupling, it is possible toachieve size reduction, particularly, pitch narrowing by reducing thesize of the opening portion 12A.

It is also possible to achieve size reduction, particularly, pitchnarrowing by arranging the coupling via the opening portion 12 and thecoupling via the opening portion 12A at intervals of two or moreterminals and thereby using the coupling via the opening portion 12 for,for example, power (large current), analogue, or low-resistance couplingand the coupling via the opening portion 12A for high-resistancecoupling.

Embodiment 9

In Embodiment 2, the bump electrode is disposed such that it is withinthe planar region of the pad, while in the present embodiment, a bumpelectrode protrudes from the planar region of the pad. Embodiment 9 issimilar to Embodiment 2 except for the above-described difference.

FIGS. 33(a), 33(b) and 33(c) are fragmentary schematic plan views of asemiconductor device according to the present embodiment, wherein FIG.33(a) illustrates a bump electrode having a rectangular planar shape,FIG. 33(b) illustrates a bump electrode having a polygonal planar shape,and FIG. 33(c) illustrates a bump electrode having a circular planarshape. FIG. 33 illustrates the device after removal of a portionthereof.

The semiconductor device according to this embodiment can be obtained byforming a mask 23 with an opening portion 22 having a planar shape asillustrated in any one of FIGS. 33(a), 33(b) and 33(c) in the stepdescribed in Embodiment 2 referring to FIG. 22 and then forming a bumpelectrode 17 made of, for example, an Au film on the seed film 19 byelectroplating.

In the case of a high pin count product, a bump electrode 17 made of anAu film according to the present embodiment is advantageous over a studbump electrode for wire bonding or flip chip from the viewpoint ofsecuring a coupling area to the outside and relaxing the damage to alow-k layer (interlayer insulating film). When the bump electrode 17 iscoupled over the probe mark 100, it is necessary to separate the proberegion 10A from the coupling region 10B and completely coupling the bumpelectrode in the coupling region 10B in order to prevent the problemrelated to securement of the flatness.

Embodiment 10

In Embodiment 1, the bump electrode made of a solder is formed on aportion of the plating film (rewiring layer) at the position distantfrom the pad. In the present embodiment, on the other hand, a bumpelectrode made of a solder is placed on a pad via a plating film.Embodiment 10 is similar to Embodiment 1 except for the above-descrieddifference.

FIGS. 34(a) and 34(b) are fragmentary cross-sectional schematic views ofa semiconductor device according to this embodiment, wherein FIG. 34(a)illustrates a probe region 10A separated from a coupling region 10B andFIG. 34(b) illustrates a coupling region 10B including a probe region10A.

For example when a bump electrode made of a solder is directly formed ona pad 2 made of an Al film, the coupling strength becomes too low tocause deterioration in the reliability of a semiconductor device. Asshown in this embodiment, use of a plating film 7 made by platingbetween the pad 2 made of an Al film and a bump electrode 9 made of asolder enables to ensure the coupling strength and thereby improve thereliability of the semiconductor device.

When the coupling region 10B includes the probe region 10A asillustrated in FIG. 34(b), the coupling region 10B can be made largerthan that of FIG. 34(a). Such a configuration can be used for productsnot capable of exposing the pad 2 made of an Al film.

Embodiment 11

In this embodiment, a compact and high-density SiP (System in Package)is obtained by stacking semiconductor chips by using flip chip and wirebonding technologies.

FIGS. 35 to 39 are cross-sectional schematic views of a semiconductordevice during manufacturing steps thereof according to this embodiment.As illustrated in FIG. 35, a semiconductor chip 1C1 as described inEmbodiment 1 is flip mounted on one surface side of an insulatingsubstrate 32 made of a glass epoxy resin or a polyimide resin. Theinsulating substrate 32 has almost a similar shape to that of thesemiconductor chip 1C1 but slightly larger. On the surface side of thesubstrate, a plurality of land electrodes (not illustrated) is formed ata similar positional relationship to bump electrodes 9, in the ballform, of the semiconductor chip 1C1. This means that the bump electrodes9 of the semiconductor chip 1C1 are electrically coupled to the landselectrodes of the insulating substrate 32 by flip mounting. Morespecifically, the land electrodes can be electrically coupled to thebump electrodes 9 without causing misalignment because as described inEmbodiment 1, the bump electrodes 9 are placed on the rewiring layer ledfrom the pads of a narrow pitch so that a ball diameter can be ensured.

As illustrated in FIG. 36, a semiconductor chip 1C2 described inEmbodiment 2 and a semiconductor chip 1C3 described in Embodiment 3 arestacked one after another over the semiconductor chip 1C with anadhesive material. Then, as illustrated in FIG. 37, the land electrodeson the insulating substrate 32 are electrically coupled to the pads onthe semiconductor chips 1C2 and 1C3 via wires 33.

One example of the coupling of the wire 33 in the stacked chips isillustrated in FIGS. 40 and 41. In FIGS. 40 and 41, the semiconductorchip 1C2 and the semiconductor chip 1C3 are bonded via an adhesivematerial 36. In FIG. 40, a wire 33 a is electrically coupled from thepad 17 of the semiconductor chip 1C2 to the pad 26 of the semiconductorchip 1C3. This means that a ball of the wire 33 a is formed on the pad17 of the semiconductor chip 1C and a stitch of the wire 33 a is formedon the pad 26 of the semiconductor chip 1C3. In a conventional manner, astud bump for wire bonding is formed and then stitching is performed onthe stud bump because of difficulty in stitching to the Al pads arrangedwith a narrow pitch. A wire 33 b is electrically coupled to the landelectrode on the surface of the insulating substrate 32 from the pad 26of the semiconductor chip 1C3. This means that a ball of the wire 33 bis formed on the stitch formed on the pad 26. By bonding the wires 33 aand 33 b in such a manner, size reduction of a semiconductor device canbe achieved.

In FIG. 41, there is a plurality of wire bonding regions on a rewiringlayer 7 of the semiconductor chip 1C3. A wire 33 a is electricallycoupled from the pad 17 of the semiconductor chip 1C2 to a pad 26 a ofthe semiconductor chip 1C3. This means that a ball of the wire 33 a isformed on the pad 17 of the semiconductor chip 1C2 and a stitch of thewire 33 a is formed on the pad 26 a of the semiconductor chip 1C3. Inaddition, a wire 33 b is electrically coupled from a pad 26 b of thesemiconductor chip 1C3 to the land electrode on the surface of theinsulating substrate 32. This means that a ball of the wire 33 b isformed on the pad 26 b. Thus, by forming the two pads 26 a and 26 bseparately on the rewiring layer 7 of the semiconductor chip 1C3, wirebonding of the wires 33 a and 33 b can be performed in a flat region sothat good coupling property can be secured. Even if there is a distancebetween the wires 33 a and 33 b, they can be electrically coupled viathe rewiring layer 7.

As illustrated in FIG. 38, the semiconductor chips 1C1, 1C2, and 1C3 aresealed with a resin 34. Then, as illustrated in FIG. 39, ball electrodes35 to be electrically coupled to the land electrodes on the surface ofthe insulating substrate 32 are formed on the side opposite to thesurface. These ball electrodes 35 are formed with a pitch greater thanthe pitch between land electrodes such that they correspond to the landelectrodes on the surface of the insulating substrate 32. This meansthat the insulating substrate 32 becomes a so-called interposersubstrate.

Thus, a SiP product (semiconductor device) of this embodiment can becompleted. Various semiconductor devices can be obtained by mounting theSiP product of this embodiment on a mother substrate. In the methodusing an interposer, the electrode patterns of a mother substrate may beformed while causing them to correspond to ball electrode patterns ofthe interposer substrate so that a pitch between electrodes of themother substrate can be enlarged. As a result, a mother substrate can beformed easily at a low cost.

The invention made by the present inventors was so far describedspecifically based on some embodiments. It should however be borne inmind that the invention is not limited to or by them. It is needless tosay that various modifications or changes are possible without departingfrom the gist thereof.

For example, in the above embodiments, a cantilever system probe isemployed for the probe test step, but it can be replaced by a verticallymovable system.

In the above embodiments, the probe test step is followed by coupling ofthe conductive member to the coupling region. The order is not limitedto it. For example, a product which must avoid application of a heatload thereto in the passivation, seed, resist or plating step after aprobe test (a product from which ROM write to be performed in the probestep disappears or a product requiring fuse cut (switching of a memorybit, adjustment of variations in resistance)), probing is performedpreferably after formation of a bump electrode (Au plating). When theprobe test step is performed after formation of a conductive member, Cumay be used as a material of the pad because a probe needle is notbrought into contact with the pad.

When the conductive member is coupled to the coupling region prior tothe probe test step, there is a fear of the surface of the couplingregion being contaminated due to the influence of a heat load during theprobe test step. It is therefore recommended to clean the surface of thecoupling region.

The present invention is utilized widely in the manufacturing industryof semiconductor devices having a conductive film formed on a pad aftera probe test step, which is performed by bringing a probe needle to thepad. The invention can be applied to products with a narrow pitch, forexample, mobile products, navigation products, in-vehicle products andanalog products having electrical properties capable of satisfyingsevere requirements.

The invention claimed is:
 1. A method of manufacturing a semiconductordevice, comprising the steps of: (a) providing a semiconductor waferhaving a device formation region equipped with a pad, and a firstinsulating film formed so as to expose a portion of the pad; (b) afterthe step (a), bringing a probe needle in contact with a first region ofthe portion of the pad, thereby forming a probe mark at the firstregion; (c) after the step (b), forming a second insulating film overthe first insulating film such that a second region of the portion ofthe pad is exposed from the second insulating film; and (d) after thestep (c), forming a wiring over the second insulating film, the wiringbeing electrically connected with the pad at the second region but notat the first region, wherein, in plan view, the wiring is formed suchthat the pad is located closer than a part of the wiring, to which oneof a bump electrode and a wire is connected, to an edge of the deviceformation region, wherein, in plan view, the part of the wiring isarranged in a center portion of the device formation region, in whichthe pad is not located, wherein, in plan view, the first region islocated closer than the second region to the center portion of therespective device formation region, and wherein, in plan view, thewiring is led from the second region to the center portion of the deviceformation region such that the wiring does not overlap with the probemark.
 2. The method according to claim 1, wherein the pad is made of Al(aluminum), and wherein the probe needle is made of W (tungsten).
 3. Themethod according to claim 2, wherein the first insulating film is aninorganic insulating film, and wherein the second insulating film is anorganic insulating film.
 4. The method according to claim 3, wherein thefirst insulating film is made of silicon nitride, and wherein the secondinsulating film is made of polyimide.
 5. The method according to claim1, wherein, in the step (b), the probe needle is brought in contact withthe first region of the portion, while shifting the probe needle in onedirection.
 6. The method according to claim 1, wherein, in the step (c),the second insulating film is formed over the first insulating film soas to cover the first region of the portion of the pad.
 7. The methodaccording to claim 1, wherein, after the step (c) and before the step(d), a seed film is formed on the second insulating film, and whereinthe wiring is electrically connected with the pad via the seed film. 8.The method according to claim 7, wherein the seed film is made of one ofPd, Pd/Ti, Ti and TiN, and wherein the wiring is made of one of Cu andNi/Cu.
 9. The method according to claim 1, wherein, after the step (d),a third insulating film is formed over the wiring so as to expose thepart of the wiring.
 10. The method according to claim 9, wherein thethird insulating film is an organic insulating film.
 11. The methodaccording to claim 10, wherein the third insulating film is made ofpolyimide.
 12. The method according to claim 9, wherein, after the thirdinsulating film is formed over the wiring, a bump electrode is formed onthe part of the wiring exposed from the third insulating film.
 13. Themethod according to claim 9, wherein, after the third insulating film isformed over the wiring, a wire is connected with the part of the wiringexposed from the third insulating film.